SSG4470STM n-ch enhancement mode power mosfet 10 a, 40 v, r ds(on) 10 m ? elektronische bauelemente 29-apr-2010 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g features ? super high dense cell design for low r ds (on). ? rugged and reliable. ? surface mount package. product summary product summary v dss (v) d r ds (on) m( ? ? ? max i d (a) 40 10@v gs = 10v 10 13@v gs = 4.5v marking maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds d 40 v gate-source voltage v gs 20 v continuous drain current a @t j = 25c i d 10 a pulsed drain current b i dm 39 a drain-source diode forward current a i s 1.7 a maximum power dissipation a p d 2.5 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient a r ja 50 c / w ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. stm4470 ????? ?? 1 s s s g d d d d ? = date code 2 3 4 5 6 7 8 sop-8
SSG4470STM n-ch enhancement mode power mosfet 10 a, 40 v, r ds(on) 10 m ? elektronische bauelemente 29-apr-2010 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions off characteristics drain-source breakdown voltage d bv dss 40 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1 a v ds = 32v, v gs = 0v gate-body leakage current i gss - - 100 na v gs = 20v, v ds = 0v on characteristics b gate threshold voltage v gs(th) 1 1.7 3 v v ds = v gs , i d = 250 a drain-source on-state resistance r ds(on) - 8 10 m ? v gs = 10v, i d = 10a - 11 13 v gs = 4.5v, i d = 6a on-state drain current i d(on) 20 - - a v ds = 10v, v gs = 10a forward transconductance g fs - 20 - s v ds = 10v, i d = 10a dynamic characteristics c input capacitance c iss - 1020 - pf v ds = 20v, v gs = 0v, f= 1.0mhz output capacitance c oss - 240 - reverse transfer capacitance c rss - 135 - switching characteristics c turn-on delay time t d(on) - 15 - ns v dd = 20v i d = 1a v gs = 10v r gen = 3.3 ? rise time t r - 22 - turn-off delay time t d(off) - 48 - fall time t f - 12 - total gate charge q g - 19.5 - nc v ds = 20v, i d = 10a, v gs = 10v - 9.8 - v ds = 20v, i d = 10a, v gs = 4.5v gate-source charge q gs - 2 - v ds = 20v, i d = 10a, v gs = 10v gate-drain charge q gd - 5.5 - drain-source diode characteristics b diode forward voltage v sd - 0.73 1.2 v v gs = 0v, i s = 1.7a notes a. surface mounted on fr4 board, t Q 10 sec. b. pulse test pulse width Q 300 s, duty cycle Q 2 . c. guaranteed by design, not subject to production testing. d. guaranteed when external rg= 3.3 ? and tf tf max.
SSG4470STM n-ch enhancement mode power mosfet 10 a, 40 v, r ds(on) 10 m ? elektronische bauelemente 29-apr-2010 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SSG4470STM n-ch enhancement mode power mosfet 10 a, 40 v, r ds(on) 10 m ? elektronische bauelemente 29-apr-2010 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SSG4470STM n-ch enhancement mode power mosfet 10 a, 40 v, r ds(on) 10 m ? elektronische bauelemente 29-apr-2010 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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